AOT8N60 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 600V, 8A N-Channel MOSFET

AOT8N60 / AOTF8N60
600V, 8A N-Channel MOSFET
formerly engineering part number AOT9606/AOTF9606
General Description
The AOT8N60 & AOTF8N60 have been fabricated
using an advanced high voltage MOSFET process
that is designed to deliver high levels of performance
and robustness in popular AC-DC applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
Features
V_DS (V) = 700V @ 150°C
I_D = 8A
R_DS(ON) < 0.9 Ω (V_GS = 10V)
100% UIS Tested!
100% R _g Tested!
C _iss , C _oss , C _rss Tested!
TO-220
Top View
TO-220F
D
G
D
S
G
D
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOT8N60
AOTF8N60
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V_GS
±30
Continuous Drain T_C=25°C
Current ^B
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^G
E_AS
8
8*
5
5*
32
3.2
150
300
Peak diode recovery dv/dt
dv/dt
5
T_C=25°C
Power Dissipation ^B _{Derate above 25}^o_C
P_D
147
50
1.17
0.4
Junction and Storage Temperature Range T_J, T_STG
-50 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
300
Thermal Characteristics
Parameter
Symbol
AOT8N60 AOTF8N60
Maximum Junction-to-Ambient ^A
R_θJA
65
65
Maximum Case-to-Sink ^A
R_θCS
0.5
-
Maximum Junction-to-Case ^D,F
R_θJC
0.85
2.5
* Drain current limited by maximum junction temperature.
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
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