AOT7N60 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 600V, 7A N-Channel MOSFET

AOT7N60/AOTF7N60
600V, 7A N-Channel MOSFET
General Description
The AOT7N60 & AOTF7N60 have been fabricated
using an advanced high voltage MOSFET process
that is designed to deliver high levels of performance
and robustness in popular AC-DC applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
Features
V_DS (V) = 700V @ 150°C
I_D = 7A
R_DS(ON) < 1.2Ω
(V_GS = 10V)
100% UIS Tested!
100% R _g Tested!
C _iss , C _oss , C _rss Tested!
TO-220
Top View
TO-220F
D
G
D
S
G
D
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOT7N60
AOTF7N60
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V_GS
±30
Continuous Drain ^TC^=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^{C, G}
Repetitive avalanche energy ^{C, G}
Single pulsed avalanche energy ^G
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
7
7*
4.4
4.4*
28
3
135
270
5
T_C=25°C
Power Dissipation ^B _{Derate above 25}^o_C
P_D
176
38.5
1.4
0.3
Junction and Storage Temperature Range T_J, T_STG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient ^A,D
R_θJA
Maximum Case-to-Sink ^A
R_θCS
Maximum Junction-to-Case
R_θJC
* Drain current limited by maximum junction temperature.
-50 to 150
300
AOT7N60
65
0.5
0.71
AOTF7N60
65
--
3.25
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com