AOT5N60_10 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 600V,5A N-Channel MOSFET

AOT5N60
600V,5A N-Channel MOSFET
General Description
Product Summary
The AOT5N60 have been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.By providing low R_DS(on), C_iss and C_rss
along with guaranteed avalanche capability these parts
can be adopted quickly into new and existing offline power
supply designs.
For Halogen Free add "L" suffix to part number:
AOT5N60L
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
Top View
TO-220
D
700V@150℃
5A
<1.8Ω
G
D
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single plused avalanche energy ^G
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Maximum Junction-to-Case
Symbol
R_θJA
R_θCS
R_θJC
Maximum
600
±30
5
3.4
16
2.6
100
200
5
132
1.05
-55 to 150
300
Typical
54
-
0.76
Maximum
65
0.5
0.95
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev4: July 2010
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