AOT502 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Clamped N-Channel MOSFET

AOT502
Clamped N-Channel MOSFET
General Description
Product Summary
AOT502 uses an optimally designed temperature
compensated gate-drain zener clamp. Under overvoltage
conditions, the clamp activates and turns on the MOSFET,
safely dissipating the energy in the MOSFET.
The built in resistor guarantees proper clamp operation
under all circuit conditions, and the MOSFET never goes
into avalanche breakdown. Advanced trench technology
provides excellent low Rdson, gate charge and body diode
characteristics, making this device ideal for motor and
inductive load control applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
Clamped
60A
< 11.5mΩ
TO220
Top View
Bottom View
D
S
D
G
G
SD
10Ω
G
D
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain ^TA^=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS,I_AR
E_AS,E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Maximum
Clamped
Clamped
60
41
137
9
7
28.5
41
79
39
1.9
1.2
-55 to 175
Typ
Max
13
15.6
54
65
1.6
1.9
Rev1: May 2009
www.aosmd.com
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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