AOT500 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOT500
N-Channel Enhancement Mode Field Effect Transistor
General Description
AOT500 uses an optimally designed temperature
compensated gate-drain zener clamp. Under overvoltage
conditions, the clamp activates and turns on the
MOSFET, safely dissipating the energy in the MOSFET.
The built in resistor guarantees proper clamp operation
under all circuit conditions, and the MOSFET never goes
into avalanche breakdown. Advanced trench technology
provides excellent low Rdson, gate charge and body
diode characteristics, making this device ideal for motor
and inductive load control applications.
Standard Product AOT500 is Pb-free (meets ROHS &
Sony 259 specifications).
TO-220
Top View
Drain
Connected to
Tab
Features
V_DS (V) = Clamped
I_D = 80A (V_GS = 10V)
R_DS(ON) < 5.3 mΩ (V_GS = 10V)
D
10Ω
G
S
G DS
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
clamped
Gate-Source Voltage
V_GS
clamped
Continuous Drain T_C=25°C
80
Current ^G
T_C=100°C
I_D
57
Continuous Drain Gate Current
I_DG
+50
Continuouse Gate Source Current
I_GS
+50
Pulsed Drain Current ^C
I_DM
250
Avalanche Current L=100uH^H
I_AR
50
Repetitive avalanche energy ^H
E_AR
125
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
115
58
Junction and Storage Temperature Range T_J, T_STG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Steady-State
R_θJA
60
75
Maximum Junction-to-Case ^B
Steady-State
R_θJC
0.7
1.3
Units
V
V
A
mA
A
A
mJ
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com