AOT474 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOT474/AOTF474
N-Channel Enhancement Mode
Field Effect Transistor
General Description
The AOT(F)474/L uses a robust technology that is
designed to provide efficient and reliable power
conversion even in the most demanding applications,
including motor control. With low R_DS(ON) and excellent
thermal capability this device is appropriate for high
current switching and can endure adverse operating
conditions.
AOT(F)474/AOT(F)474L are electrically Identical
Product Summary
V_DS
I_{D_}TO220 (at V_GS=10V)
I_{D_}TO220FL (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
AOT(F)474 -RoHS Compliant
AOT(F)474L -Halogen Free
TO220
Top View
Bottom View
D
TO220FL
Top View
Bottom View
75V
127A
47A
< 11.3mΩ
D
S
GD
G
SD
S
GD
G
SD
AOT474
AOTF474
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOT474
AOTF474
Drain-Source Voltage
V_DS
75
Gate-Source Voltage
V_GS
±25
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
127
47
89
33
Pulsed Drain Current ^C
I_DM
200
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
9
9
7
7
106
562
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
417
57.5
208
29
T_A=25°C
Power Dissipation ^A T_A=70°C
1.9
1.9
P_DSM
1.2
1.2
Junction and Storage Temperature Range
T_J, T_STG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
AOT474
13.9
65
0.36
AOTF474
13.9
65
2.6
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: February 2009
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