AOT472 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 75V N-Channel MOSFET

AOT472/AOTF472
75V N-Channel MOSFET
General Description
Product Summary
The AOT472 and AOTF472 use a robust technology that
is designed to provide efficient and reliable power
conversion even in the most demanding applications,
including motor control. With low R_DS(ON) and excellent
thermal capability this device is appropriate for high
current switching and can endure adverse operating
conditions.
V_DS
I_D (TO220 at V_GS=10V)
I_D (TO220FL at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% Rg Tested
75V
140A
53A
< 8.9mΩ
TO-220
Top View
TO-220FL
D
G
D
S
AOT472
G
D
S
AOTF472
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOT472
AOTF472
Drain-Source Voltage
V_DS
75
Gate-Source Voltage
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
V_GS
±20
140^G
53
I_D
101
37.5
I_DM
340
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS,I_AR
E_AS,E_AR
10
10
8
8
125
781
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
417
57.5
208
29
T_A=25°C
Power Dissipation ^A T_A=70°C
1.9
1.9
P_DSM
1.2
1.2
Junction and Storage Temperature Range
T_J, T_STG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
AOT472
13.9
65
0.36
AOTF472
13.9
65
2.6
Rev 4: March 2009
www.aosmd.com
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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