AOT460_12 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOT460
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOT460/L uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in UPS, high
current switching applications.
AOT460and AOT460L are electrically identical.
-RoHS Compliant
-Halogen Free
Features
V_DS (V) = 60V
I_D = 85 A
(V_GS = 10V)
R_DS(ON) < 7.5mΩ (V_GS = 10V)
100% UIS Tested!
TO220
Top View
Bottom View
D
D
S
GD
G
SD
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TC^=25°C
Current^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
60
±20
85
66
340
80
320
268
134
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Steady-State
R_θJA
45
60
Maximum Junction-to-Case ^B
Steady-State
R_θJC
0.45
0.56
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com