AOT460 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOT460
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOT460 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in UPS, high
current switching applications. Standard Product
AOT460 is Pb-free (meets ROHS & Sony 259
specifications).
Features
V_DS (V) = 60V
I_D = 85 A
(V_GS = 10V)
R_DS(ON) < 7.5mΩ (V_GS = 10V)
UIS TESTED!
TO-220
D
Top View
Drain
Connected to
Tab
G DS
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
60
Gate-Source Voltage
V_GS
±20
Continuous Drain T_C=25°C
85
Current^G
T_C=100°C
I_D
85
Pulsed Drain Current ^C
I_DM
250
Avalanche Current ^C
I_AR
80
Repetitive avalanche energy L=0.1mH ^C E_AR
320
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
268
134
Junction and Storage Temperature Range T_J, T_STG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^{A Steady-State}
R_θJA
45
Maximum Junction-to-Case ^B
Steady-State
R_θJC
0.45
Max
60
0.56
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com