AOT440 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 40V N-Channel MOSFET

AOT440
40V N-Channel MOSFET
SDMOS ^TM
General Description
The AOT440 is fabricated with SDMOS^TM trench
technology that combines excellent R_DS(ON) with low gate
charge & low Qrr.The result is outstanding efficiency with
controlled switching behavior. This universal technology is
well suited for PWM, load switching and general purpose
applications.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% R_g Tested
40V
105A
< 4.7mΩ
<6mΩ
TO220
Top View
Bottom View
D
D
D
S
GD
G
SD
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS,I_AR
E_AS,E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
40
±20
105
82
330
15.5
12
40
80
150
75
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
12
48
Maximum Junction-to-Case
Steady-State
R_θJC
0.6
Max
15
60
1
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0: June 2009
www.aosmd.com
Page 1 of 7