AOT430 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOT430
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOT430 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOT430 is Pb-free (meets ROHS & Sony
259 specifications).
Features
V_DS (V) = 75V
I_D = 80 A
(V_GS = 10V)
R_DS(ON) < 11.5mΩ (V_GS = 10V)
UIS TESTED!
TO-220
D
Top View
Drain Connected
to Tab
G DS
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C ^G
Current
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
75
±25
80
78
200
45
300
268
134
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
45
0.45
Max
60
0.56
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.