AOT426 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOT426
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOT426 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOT426 is Pb-free (meets ROHS & Sony
259 specifications). AOT426L is a Green Product
ordering option. AOT426 and AOT426L are
electrically identical.
TO-220
Features
V_DS (V) = 30V
I_D = 85A
R_DS(ON) < 6mΩ (V_GS = 10V)
R_DS(ON) < 11mΩ (V_GS = 4.5V)
D
G
S
G DS
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
85
62.5
200
30
45
75
37.5
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Steady-State
40
50
Maximum Junction-to-Case ^B
Steady-State
R_θJC
1.3
2
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.