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| AOT416 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 100V N-Channel MOSFET | |||
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AOT416
100V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AOT416 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well suited
for PWM, load switching and general purpose applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
100% UIS Tested
100% Rg Tested
100V
42A
< 37mâ¦
< 43mâ¦
TO220
Top View
Bottom View
D
D
S
GD
G
SD
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±25
42
30
110
4.7
3.8
28
39
150
75
1.92
1.23
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ⤠10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
11.6
54
0.7
Max
13.9
65
1
Rev0: April 2009
www.aosmd.com
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Page 1 of 7
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