AOT412 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – N-Channel SDMOSTM Power Transistor

AOT412
N-Channel SDMOS^TM Power Transistor
General Description
Features
The AOT412 and AOT412L is fabricated with SDMOS^TM
trench technology that combines excellent R_DS(ON) with
low gate charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology
is well suited for PWM, load switching and general
purpose applications.
V_DS (V) =100V
I_D = 60A
R_DS(ON) < 15.8mΩ
R_DS(ON) < 19.4mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 7V)
- RoHS Compliant
- AOT412L is Halogen Free
100% UIS Tested!
100% R _g Tested!
TO-220
D
G
G DS
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
S
Maximum
100
±25
60
44
140
8.2
6.6
47
110
150
75
2.6
1.7
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
t ≤ 10s
Steady-State
R_θJA
15
40
18
48
Maximum Junction-to-Case
Steady-State
R_θJC
0.7
1
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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