AOT3N60_11 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 600V,2.5A N-Channel MOSFET

AOT3N60
600V,2.5A N-Channel MOSFET
General Description
Product Summary
The AOT3N60 have been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.By providing low R_DS(on), C_iss and C_rss
along with guaranteed avalanche capability these parts
can be adopted quickly into new and existing offline power
supply designs.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
For Halogen Free add "L" suffix to part number:
AOT3N60L
100% UIS Tested
100% R_g Tested
Top View
TO-220
D
700V@150℃
2.5A
<3.5Ω
G
D
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V_GS
±30
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
2.5
1.9
Pulsed Drain Current ^C
I_DM
8
Avalanche Current ^C
I_AR
2
Repetitive avalanche energy ^C
E_AR
60
Single pulsed avalanche energy ^G
E_AS
120
Peak diode recovery dv/dt
dv/dt
5
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
83
0.7
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
-55 to 150
300
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
Typical
54
-
Maximum
65
0.5
Maximum Junction-to-Case
R_θJC
1.2
1.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev5: May 2011
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