AOT2N60_10 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 600V,2A N-Channel MOSFET

AOT2N60/AOTF2N60
600V,2A N-Channel MOSFET
General Description
Product Summary
The AOT2N60 & AOTF2N60 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT2N60L & AOTF2N60L
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
TO-220
Top View
TO-220F
700V@150℃
2A
< 4.4Ω
D
G
D
S
G
D
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOT2N60
AOTF2N60
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V_GS
±30
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single plused avalanche energy ^G
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
2
2*
1.7
1.7*
8
2
60
120
5
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
74
31
0.6
0.25
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
-55 to 150
300
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
AOT2N60
65
0.5
AOTF2N60
65
--
Maximum Junction-to-Case
R_θJC
1.7
4
* Drain current limited by maximum junction temperature.
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev5: July 2010
www.aosmd.com
Page 1 of 6