AOT1N60 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 1.3A, 600V N-Channel MOSFET

AOT1N60
1.3A, 600V N-Channel MOSFET
formerly engineering part number AOT9600
General Description
The AOT1N60 has been fabricated using an
advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
Top View
TO-220
Features
V_DS (V) = 700V @ 150°C
I_D = 1.3A
R_DS(ON) < 9Ω (V_GS = 10V)
100% UIS Tested!
100% R _g Tested!
C _iss , C _oss , C _rss Tested!
D
G
D
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V_GS
±30
Continuous Drain T_C=25°C
1.3
Current ^B
T_C=100°C
I_D
0.8
Pulsed Drain Current ^C
I_DM
4
Avalanche Current ^C
I_AR
1.0
Repetitive avalanche energy ^C
E_AR
15
Single pulsed avalanche energy ^G
E_AS
30
Peak diode recovery dv/dt
dv/dt
5
T_C=25°C
Power Dissipation ^B _{Derate above 25}^o_C
P_D
41.7
0.33
Junction and Storage Temperature Range T_J, T_STG
-50 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
300
Thermal Characteristics
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambient ^A
Maximum Case-to-Sink ^A
Maximum Junction-to-Case ^D,F
R_θJA
55
65
R_θCS
-
0.5
R_θJC
2
3
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com