AOT14N50 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 500V, 14A N-Channel MOSFET

AOT14N50 / AOTF14N50
500V, 14A N-Channel MOSFET
General Description
The AOT14N50 & AOTF14N50 have been fabricated
using an advanced high voltage MOSFET process
that is designed to deliver high levels of performance
and robustness in popular AC-DC applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
Features
V_DS (V) = 600V@150°C
I_D=14A
R_DS(ON)<0.38Ω
(V _GS = 10V)
100% UIS Tested!
100% R _g Tested!
TO-220
Top View
TO-220F
D
G
D
S
G
D
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol AOT14N50 AOTF14N50
Drain-Source Voltage
V_DS
500
Gate-Source Voltage
V_GS
±30
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^{C, G}
I_AR
Repetitive avalanche energy ^{C, G}
E_AR
Single pulsed avalanche energy ^G
E_AS
14
14*
9.6
9.6*
56
6
540
1080
Peak diode recovery dv/dt
dv/dt
5
T_C=25°C
Power Dissipation ^B _{Derate above 25}^o_C
P_D
223
50
1.8
0.4
Junction and Storage Temperature Range T_J, T_STG
-50 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
300
Thermal Characteristics
Parameter
Symbol AOT14N50 AOTF14N50
Maximum Junction-to-Ambient ^A,D
R_θJA
65
65
Maximum Case-to-Sink ^A
R_θCS
0.5
--
Maximum Junction-to-Case
R_θJC
0.56
2.5
* Drain current limited by maximum junction temperature.
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com