AOT12N60 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 600V, 12A N-Channel MOSFET

AOT12N60 / AOTF12N60
600V, 12A N-Channel MOSFET
formerly engineering part number AOT9610/AOTF9610
General Description
The AOT12N60 & AOTF12N60 have been fabricated
using an advanced high voltage MOSFET process
that is designed to deliver high levels of performance
and robustness in popular AC-DC applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
Features
V_DS (V) = 700V @ 150°C
I_D = 12A
R_DS(ON) < 0.55 Ω (V_GS = 10V)
100% UIS Tested!
100% R _g Tested!
C _iss , C _oss , C _rss Tested!
TO-220
Top View
TO-220F
D
G
D
S
G
D
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOT12N60
AOTF12N60
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V_GS
±30
Continuous Drain T_C=25°C
Current ^B
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^G
E_AS
12
12*
8.1
8.1*
48
5.5
450
900
Peak diode recovery dv/dt
dv/dt
5
T_C=25°C
Power Dissipation ^B _{Derate above 25}^o_C
P_D
223
50
1.8
0.4
Junction and Storage Temperature Range T_J, T_STG
-50 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
300
Thermal Characteristics
Parameter
Symbol
AOT12N60 AOTF12N60
Maximum Junction-to-Ambient ^A,D
R_θJA
65
65
Maximum Case-to-Sink ^A
Maximum Junction-to-Case ^D,F
R_θCS
0.5
--
R_θJC
0.56
2.5
* Drain current limited by maximum junction temperature.
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com