AOT12N40 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 400V,11A N-Channel MOSFET

AOT12N40
400V,11A N-Channel MOSFET
General Description
Product Summary
The AOT12N40 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low R_DS(on), C_iss and C_rss along
with guaranteed avalanche capability this part can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT12N40L
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
Top View
TO-220
500V@150℃
11A
<0.59Ω
D
DS
G
G
AOT12N40
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
400
Gate-Source Voltage
V_GS
±30
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
11
7
Pulsed Drain Current ^C
I_DM
28
Avalanche Current ^C
I_AR
3.5
Repetitive avalanche energy ^C
E_AR
184
Single pulsed avalanche energy ^G
E_AS
368
Peak diode recovery dv/dt
dv/dt
5
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
184
1.5
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
Typical
54
-
Maximum
65
0.5
Maximum Junction-to-Case
R_θJC
0.56
0.68
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: Sep 2012
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