AOT11N70 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 700V,11A N-Channel MOSFET

AOT11N70/AOTF11N70
700V,11A N-Channel MOSFET
General Description
Product Summary
The AOT11N70 & AOTF11N70 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT11N70L & AOTF11N70L
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
TO-220
Top View
TO-220F
800V@150℃
11A
< 0.87Ω
D
G
DS
G
S
GD
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOT11N70
AOTF11N70
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single plused avalanche energy ^G
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
Maximum Junction-to-Case
R_θJC
* Drain current limited by maximum junction temperature.
700
±30
11
11*
7.2
7.2*
43
4
120
240
5
271
50.0
2.1
0.4
-55 to 150
300
AOT11N70
65
0.5
0.46
AOTF11N70
65
--
2.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev 0: March 2010
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