AOT10N65 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 650V,10A N-Channel MOSFET

AOT10N65/AOTF10N65
650V,10A N-Channel MOSFET
General Description
Product Summary
The AOT10N65 & AOTF10N65 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT10N65L & AOTF10N65L
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
TO-220
Top View
TO-220F
750V@150℃
10A
< 1Ω
D
G
D
S
G
D
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOT10N65
AOTF10N65
Drain-Source Voltage
V_DS
650
Gate-Source Voltage
V_GS
±30
Continuous Drain ^TC=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single pulsed avalanche energy ^G
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
10
10*
6.2
6.2*
36
3.4
173
347
5
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
250
50
2
0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
-55 to 150
300
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
AOT10N65
65
0.5
AOTF10N65
65
--
Maximum Junction-to-Case
R_θJC
0.5
2.5
* Drain current limited by maximum junction temperature.
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev3:March 2011
www.aosmd.com
Page 1 of 6