AOP806 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AOP806
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOP806 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge.
This device is suitable for use as a load switch or
in PWM applications.
Standard Product AOP806 is Pb-free (meets
ROHS & Sony 259 specifications).
Features
V_DS (V) = 75V
I_D = 3.4A (V_GS = 10V)
R_DS(ON) < 132mΩ (V_GS = 10V)
R_DS(ON) < 168mΩ (V_GS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
PDIP-8
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Maximum
Parameter
Symbol 10 Sec Steady State
Drain-Source Voltage
V_DS
75
Gate-Source Voltage
V_GS
±25
Continuous Drain T_A=25°C
Current ^AF
T_A=70°C
Pulsed Drain Current ^B
3.4
2.7
I_D
2.7
2.1
I_DM
15
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.3mH ^B
E_AR
2.5
1.6
1.6
1
10
15
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A Steady-State}
R_θJA
40
67
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
33
Max
50
80
40
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com