AOP610 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AOP610
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP610 uses advanced trench technology
MOSFETs to provide excellent R_DS(ON) and low
gate charge. The complementary MOSFETs
may be used to form a level shifted high side
switch, and for a host of other applications. A
Schottky diode in parallel with the n-channel
FET reduces body diode related losses. It is
ESD protected. Standard product AOP610 is
Pb-free (meets ROHS & Sony 259
specifications). AOP610L is a Green Product
ordering option. AOP610 and AOP610L are
electrically identical.
Features
n-channel
p-channel
V_DS (V) = 30V
-30V
I_D = 7.7A (V_GS=10V) -6.2A (V_GS=10V)
R_DS(ON)
R_DS(ON)
< 24mΩ (V_GS=10V) < 37m Ω (V_GS = -10V)
< 42mΩ (V_GS=4.5V) < 60m Ω (V_GS = -4.5V)
ESD rating: 1500V (HBM)
PDIP-8
S2/A _{1 8 D2/K N-ch}
G2 2 7 _D2/K
S1
G1
3
4
6
5
D1 _P-ch
D1
D2
D1
K2
G2
G1
A2
S2
S1
n-channel
Absolute Maximum Ratings T _A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain T_A=25°C
7.7
Current ^A
T_A=70°C
I_D
6.1
Pulsed Drain Current ^B
I_DM
30
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.1mH ^B
E_AR
2.3
1.45
15
11
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
p-channel
Max p-channel
-30
±20
-6.2
-4.9
-30
2.3
1.45
20
20
-55 to 150
Units
V
V
A
W
A
mJ
°C
Thermal Characteristics: n-channel+schottky and p-channel
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
n-ch
n-ch
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
n-ch
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
p-ch
p-ch
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
p-ch
Max
45
55
78
95
30
40
38.5
55
78
95
28
40
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.