AOP608 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AOP608
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP608 uses advanced trench
technology MOSFETs to provide excellent
R_DS(ON) and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications. Standard Product AOP608
is Pb-free (meets ROHS & Sony 259
specifications). AOP608L is a Green
Product ordering option. AOP608 and
AOP608L are electrically identical.
Features
n-channel
V_DS (V) = 40V
I_D = 6.3A (V_GS=10V)
R_DS(ON)
< 33mΩ (V_GS=10V)
< 46mΩ (V_GS=4.5V)
p-channel
-40V
-5.5A (V_GS = -10V)
R_DS(ON)
< 45mΩ (V_GS = -10V)
< 63mΩ (V_GS = -4.5V)
D2
D1
S2 1 8 D2
G2 2 7 D2
S1 ^{3 6} D1
G1 ^{4 5} D1
G2
S2
G1
S1
PDIP-8
n-channel
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
40
Gate-Source Voltage
V_GS
±20
Continuous Drain
T_A=25°C
6.3
Current ^A
T_A=70°C
I_D
5
Pulsed Drain Current ^B
I_DM
20
Power Dissipation
T_A=25°C
T_A=70°C
P_D
2.5
1.6
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Max p-channel
-40
±20
-5.5
-4.4
-20
2.5
1.6
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
37
50 °C/W
74
90 °C/W
28
40 °C/W
35
50 °C/W
73
90 °C/W
32
40 °C/W
Alpha & Omega Semiconductor, Ltd.