AOP601 Datasheet, PDF (1/8 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AOP601
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP601 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications. A
Schottky diode in parallel with the n-channel FET
reduces body diode related losses. Standard
Product AOP601 is Pb-free (meets ROHS & Sony
259 specifications). AOP601L is a Green Product
ordering option. AOP601 and AOP601L are
electrically identical.
Features
n-channel
p-channel
V_DS (V) = 30V
-30V
I_D = 7.5A (VGS = 10V) -6.6A
R_DS(ON)
< 28mΩ
< 35mΩ (V_GS = -10V)
< 43mΩ
< 58mΩ (V_GS = -4.5V)
Schottky
V_DS=30V, I_F=3A, V_F<0.5V@1A
PDIP-8
S2 1 8 D2 _P-ch
G2 ^{2 7} D2
S1/A ³
G1 ⁴
6
5
D1/K _N-ch
D1/K
D2
D1
K
G2
G1
A
S2
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain
T_A=25°C
7.5
Current ^A
T_A=70°C
I_D
6
Pulsed Drain Current ^B
I_DM
30
Power Dissipation
T_A=25°C
T_A=70°C
P_D
2.5
1.6
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Max p-channel
-30
±20
-6.6
-5.3
-30
2.5
1.6
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward T_A=25°C
Current ^A
T_A=70°C
Pulsed Forward Current ^B
T_A=25°C
Power Dissipation ^A T_A=70°C
Junction and Storage Temperature Range
Symbol
V_DS
I_D
I_DM
P_D
T_J, T_STG
Maximum Schottky
30
4
2.7
20
2.5
1.6
-55 to 150
Units
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.