AON7826 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 20V Dual N-Channel MOSFET

AON7826
20V Dual N-Channel MOSFET
General Description
The AON7826 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two low R_{DS (ON)}
MOSFETs in a dual DFN3x3 package. The AON7826 is
well suited for use in compact DC/DC converter
applications.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS =4.5V)
R_DS(ON) (at V_GS =2.5V)
R_DS(ON) (at V_GS =1.8V)
100% UIS Tested
100% R_g Tested
20V
22A
< 23mΩ
< 26mΩ
< 34mΩ
< 52mΩ
DFN 3x3A_Dual
Top View
Bottom View
Pin 1
D1
D1
S2
G2
Pin 1
Top View
G1
S1
D2
D2 _G1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
20
±12
22
14
50
9
7
8
3
16.7
6.7
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
30
60
Maximum Junction-to-Case
Steady-State
R_θJC
6.2
Max
40
75
7.5
D1
D2
G2
S1
S2
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Dec. 2010
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