AON7810 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V Dual N-Channel AlphaMOS

AON7810
30V Dual N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low R_DS(ON) at 4.5V V_GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=4.5V)
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% R_g Tested
30V
6A
< 14mΩ
< 20.5mΩ
DFN 3x3_Dual
Top View
Bottom View
Pin 1
D1
D1
S2
G2
Pin 1
Top View
G1
S1
D2
D2 _G1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche energy L=0.05mH ^C
E_AS
V_DS Spike
100ns
V_SPIKE
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
6
5
24
6
5
20
10
36
20.5
8
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
30
60
Maximum Junction-to-Case
Steady-State
R_θJC
5
Max
40
75
6
D1
D2
G2
S1
S2
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0: Aug 2012
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