AON7704 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AON7704
N-Channel Enhancement Mode Field Effect Transistor
SRFET ^TM
General Description
SRFET^TM AON7704/L uses advanced trench technology with
a monolithically integrated Schottky diode to provide excellent
R_DS(ON),and low gate charge.
This device is suitable for use as a low side FET in SMPS,
load switching and general purpose applications.
Features
V_DS (V) = 30V
I_D = 10A
(V_GS = 10V)
R_DS(ON) < 20mΩ (V_GS = 10V)
R_DS(ON) < 31mΩ (V_GS = 4.5V)
- RoHS Compliant.
- Halogen Free
Top View
DFN 3x3
Bottom View
Pin 1
S
S
S
G
D
D
DG
D
D
S
SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_C=25°C
Current ^B,G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain T_A=25°C
Current ^B
T_A=70°C
I_DSM
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
14
14
50
10
7.5
35
14
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
30
60
40
75
Maximum Junction-to-Case ^D
Steady-State
R_θJC
4.5
5.5
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com