AON7702 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AON7702
N-Channel Enhancement Mode Field Effect Transistor
SRFET ^TM
General Description
Features
SRFET^TM AON7702/L uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent R_DS(ON),and low gate charge.
This device is suitable for use as a low side FET in SMPS,
load switching and general purpose applications.
V_DS (V) = 30V
I_D = 13.5A
R_DS(ON) < 10mΩ
R_DS(ON) < 14mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
- RoHS Compliant.
- Halogen Free
Top View
DFN 3x3
Bottom View
S
Pin 1
S
S
G
D
D
D
SRFET ^TM
G
D
Soft Recovery MOSFET:
D
Integrated Schottky Diode
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current ^B,G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current ^B
T_A=70°C
I_DSM
Power Dissipation ^B
T_C=25°C
T_C=100°C
P_D
Power Dissipation ^A
T_A=25°C
T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
20
20
80
13.5
10
35
14
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^D
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
30
60
Steady-State
R_θJC
3.1
Max
40
75
3.7
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com