AON7700_12 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AON7700
30V N-Channel MOSFET
SRFET ^TM
General Description
Product Summary
SRFET^TM AON7700 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent R_DS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=4.5V)
30V
40A
< 7.2mΩ
< 8.6mΩ
100% UIS Tested
100% R_g Tested
DFN 3x3 EP
Top View
Bottom View
Pin 1
Top View
1
8
2
7
3
6
4
5
G
D
SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±12
40
28
100
16
12
17
14
26
10
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
30
60
Maximum Junction-to-Case
Steady-State
R_θJC
4
Max
40
75
4.8
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 3: May. 2012
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