AON7700 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AON7700
N-Channel Enhancement Mode Field Effect Transistor
SRFET ^TM
General Description
SRFET^TM AON7700/L uses advanced trench technology with a
monolithically integrated Schottky diode to provide excellent
R_DS(ON),and low gate charge.
This device is suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
Features
V_DS (V) = 30V
I_D = 12A
(V_GS = 10V)
R_DS(ON) < 8.5mΩ (V_GS = 10V)
R_DS(ON) < 10mΩ (V_GS = 4.5V)
- RoHS Compliant.
- Halogen Free
Top View
DFN 3x3
Bottom View
Pin 1
S
S
S
G
D
D
D_G
D
D
S
SRFET ^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_C=25°C
Current ^B,H
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain T_A=25°C
Current ^G
T_A=70°C
I_DSM
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
20
20
80
12
11
33
13
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^D
t ≤ 10s
Steady-State
Steady-State
Symbol
Typ
R_θJA
30
60
R_θJC
3.1
Max
40
75
3.7
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com