AON7611 Datasheet, PDF (1/11 Pages) Alpha & Omega Semiconductors – 30V Complementary MOSFET

AON7611
30V Complementary MOSFET
General Description
The AON7611 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. The
complementary MOSFETs may be used in inverter and
other applications.
Product Summary
N-channel
V_DS (V) = 30V
I_D = 9.0A
R_DS(ON) < 50mΩ
R_DS(ON) < 70mΩ
P-channel
V_DS (V) = -30V
I_D = -18.5A
R_DS(ON) < 38mΩ
R_DS(ON) < 62mΩ
(V_GS = ±10V)
(V_GS = ±10V)
(V_GS = ±4.5V)
100% UIS Tested
100% R_g Tested
DFN 3x3 EP
Top View
Bottom View
Top View
D2
D1
Pin 1
S2
D2
G2
D2
S1
D1
G1
D1 G2
G1
S2
S1
N-channel
P-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max N-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain
Current
T_A=25°C
T_A=100°C
I_D
9
5.5
Pulsed Drain Current ^C
I_DM
20
Continuous Drain
Current ^A
T_A=25°C
T_A=70°C
4
I_DSM
3
Avalanche Current ^C
I_AR
7
Repetitive avalanche energy L=0.1mH ^C
E_AR
2
T_A=25°C
Power Dissipation ^B T_A=100°C
P_D
7
2.8
T_A=25°C
Power Dissipation ^A T_A=70°C
1.5
P_DSM
0.9
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Max P-channel
-30
±20
-18.5
-11.5
-35
-5
-4
-17
14
20.8
8.3
1.5
0.9
-55 to 150
Units
V
V
A
A
mJ
W
W
°C
Thermal Characteristics: N-channel
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
40
70
Maximum Junction-to-Case ^B
Steady-State
R_θJC
15
Thermal Characteristics: P-channel
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
40
70
Maximum Junction-to-Case ^B
Steady-State
R_θJC
5
Max
Units
50
°C/W
85
°C/W
18
°C/W
Max
Units
50
°C/W
85
°C/W
6
°C/W
Rev 1: Dec 2011
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