AON7536 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel AlphaMOS

AON7536
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low R_DS(ON) at 4.5V V_GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=4.5V)
30V
68A
< 4.2mΩ
< 6.2mΩ
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% R_g Tested
DFN 3.3x3.3 EP
Top View
Bottom View
Pin 1
Top View
1
8
2
7
3
6
4
5
G
Pin 1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche energy L=0.01mH ^C
E_AS
V_DS Spike
100ns
V_SPIKE
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
68
43
150
24
19
60
18
36
32.5
13
4.1
2.6
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
25
50
Maximum Junction-to-Case
Steady-State
R_θJC
3.1
Max
30
60
3.8
D
S
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev.1.0: October 2013
www.aosmd.com
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