AON7528 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel AlphaMOS

AON7528
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5V_GS
• Low Gate Charge
• ESD protection
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
Typical ESD protection
100% UIS Tested
100% R_g Tested
30V
50A
< 2mΩ
< 3.4mΩ
HBM Class 2
DFN 3x3 EP
Top View
Bottom View
Pin 1
Top View
S¹
S²
S³
G⁴
8_D
7D
6D
G
5D
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche energy L=0.05mH ^C
E_AS
V_DS Spike
100ns
V_SPIKE
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
50
39
200
45
36
50
63
36
83
33
6.2
4
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
16
45
Maximum Junction-to-Case
Steady-State
R_θJC
1.1
Max
20
55
1.5
D
S
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0: May 2012
www.aosmd.com
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