|
AON7502 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel AlphaMOS | |||
|
AON7502
30V N-Channel AlphaMOS
General Description
⢠Latest Trench Power AlphaMOS (αMOS LV) technology
⢠Very Low RDS(on) at 6VGS
⢠Low Gate Charge
⢠High Current Capability
⢠RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 6V)
Application
⢠Load Switch Applications
⢠Battery Power Management
100% UIS Tested
100% Rg Tested
30V
30A
< 4.7mâ¦
< 7.6mâ¦
DFN 3x3 EP
Top View
Bottom View
Pin 1
Top View
1
8
2
7
3
6
4
5
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
CurrentG
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
Current
TA=25°C
TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.05mH C
EAS
VDS Spike
100ns
VSPIKE
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±25
30
23.5
120
21
17
30
23
36
31
12.5
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ⤠10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
30
60
Maximum Junction-to-Case
Steady-State
RθJC
3.2
Max
40
75
4
D
S
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0: Nov. 2012
www.aosmd.com
Page 1 of 6
|
▷ |