AON7462 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 300V,2.5A N-Channel MOSFET

AON7462
300V,2.5A N-Channel MOSFET
General Description
Product Summary
The AON7462 is fabricated using an advanced high voltage
MOSFET process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability this device can be adopted
quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested!
100% R_g Tested!
DFN 3x3A_EP
Top View
Bottom View
350V@150℃
2.5A
< 1.5Ω
D
Pin 1
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current^B
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
Avalanche Current ^C
T_A=70°C
Repetitive avalanche energy ^C
Single pulsed avalanche energy ^G
Peak diode recovery dv/dt
I_DSM
I_AR
E_AR
E_AS
dv/dt
Power Dissipation ^B
T_C=25°C
T_C=100°C
P_D
Power Dissipation ^A
T_A=25°C
T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Maximum
300
±30
2.5
1.6
7.2
0.9
0.7
1.4
29
58
5
25
10
3.1
2
-50 to 150
Typ
Max
30
40
60
75
4.2
5
S
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0: Feb 2011
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