AON7452 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 100V N-Channel MOSFET

AON7452
100V N-Channel MOSFET
SDMOS ^TM
General Description
The AON7452 is fabricated with SDMOS^TM trench
technology that combines excellent R_DS(ON) with low gate
charge and low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=7V)
100% UIS Tested
100% R_g Tested
100V
5.5A
< 310mΩ
< 370mΩ
DFN 3x3 EP
Top View
Bottom View
Pin 1
Top View
1
8
2
7
3
6
4
5
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
100
±25
5.5
3.5
12
2.5
2
2.5
0.3
17
7
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
30
60
Maximum Junction-to-Case
Steady-State
R_θJC
6
Max
40
75
7.2
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1: April 2011
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