AON7444 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 60V N-Channel MOSFET

AON7444
60V N-Channel MOSFET
SDMOS ^TM
General Description
The AON7444 is fabricated with SDMOS^TM trench
technology that combines excellent R_DS(ON) with low gate
charge and low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=4.5V)
100% UIS Tested
100% R_g Tested
60V
33A
< 22mΩ
< 26mΩ
DFN 3x3 EP
Top View
Bottom
Pin 1
Top View
1
8
2
7
3
6
4
5
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Maximum
60
±20
33
21
75
9
7
30
45
42
17
3.1
2
-55 to 150
Typ
Max
30
40
60
75
2.5
3
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 2: Mar. 2011
www.aosmd.com
Page 1 of 7