AON7430 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AON7430
30V N-Channel MOSFET
General Description
Features
The AON7430 uses advanced trench technology to
provide excellent R_DS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and
general purpose applications.
V_DS (V) = 30V
I_D = 34A
R_DS(ON) < 12mΩ
R_DS(ON) < 16mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
100% UIS Tested
100% R_g Tested
DFN 3x3 EP
Top View
Bottom
Pin 1
Top View
1
8
2
7
3
6
G
4
5
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
34
21
80
13
10.2
22
24
23
9
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
30
60
Steady-State
R_θJC
4.5
Max
40
75
5.4
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 3: Feb 2010
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