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AON7424 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET
AON7424
30V N-Channel MOSFET
General Description
Product Summary
The AON7424 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
ESD protected
100% UIS Tested
100% Rg Tested
30V
40A
< 5.2mΩ
< 7.5mΩ
Top View
DFN 3x3 EP
Bottom View
Top View
1
8
2
7
3
6
G
4
5
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
CurrentG
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
40
31
140
18
15
45
101
36
14
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
30
60
Maximum Junction-to-Case
Steady-State
RθJC
2.8
Max
40
75
3.4
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1: Mar 2010
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