AON7410 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AON7410
30V N-Channel MOSFET
General Description
The AON7410 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in DC - DC
converters and Load Switch applications.
Features
V_DS (V) = 30V
I_D = 24A
R_DS(ON) < 20mΩ
R_DS(ON) < 26mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
Top View
Bottom View
Pin 1
Top View
1
8
2
7
3
6
4
5
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TC^=25°C
Current ^B
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current ^A
T_A=25°C
T_A=70°C
Avalanche Current ^C
Repetitive avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
24
15
50
9.5
7.7
17
14
20
8.3
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
30
60
40
75
Maximum Junction-to-Case ^B
Steady-State
R_θJC
5
6
Alpha & Omega Semiconductor, Ltd.
D
S
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
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