AON7406_11 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AON7406
30V N-Channel MOSFET
General Description
The AON7406 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge.
This device is suitable for use in SMPS and general
purpose applications.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=4.5V)
Typical ESD protection
100% UIS Tested
100% R_g Tested
30V
25A
< 17mΩ
< 23mΩ
HBM Class 2
DFN 3x3A
Top View
Bottom View
Top View
S
D
S
D
S
D
G
G
D
Pin 1
Pin 1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
25
15
50
9
7
19
18
16.7
6.7
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
30
60
Maximum Junction-to-Case
Steady-State
R_θJC
6.2
Max
40
75
7.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 5: Dec. 2010
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