AON7406 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AON7406
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON7406 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in SMPS and
general purpose applications. Standard Product
AON7406 is Pb-free (meets ROHS & Sony 259
specifications).
Features
V_DS (V) = 30V
I_D = 11A
(V_GS = 10V)
R_DS(ON) < 15mΩ (V_GS = 10V)
R_DS(ON) < 23.5mΩ (V_GS = 4.5V)
Top View
DFN 3x3
Bottom View
Pin 1
D
S
D
S
D
S
D
G
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_C=25°C
Current ^B,H
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain T_A=25°C
Current ^G
T_A=70°C
I_DSM
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
20
20
50
11
8.8
27
11
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
30
60
40
75
Maximum Junction-to-Case ^D
Steady-State
R_θJC
4
4.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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