AON7401 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AON7401
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AON7401/L uses advanced trench technology to
provide excellent R_DS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications.
AON7401 and AON7401L are electrically identical.
-RoHS Compliant
-AON7401L is Halogen Free
Features
V_DS (V) = -30V
I_D = -9A
(V_GS = -10V)
R_DS(ON) < 14mΩ (V_GS = -10V)
R_DS(ON) < 36mΩ (V_GS = -4.5V)
DFN 3x3
Top View
Bottom View
D
Pin 1
S
D
S
D
S
D
G
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_C=25°C
Current ^B,G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
I_DSM
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
-30
±25
-20
-20
-80
-9
-7
27
11
1.6
1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
30
60
40
75
Maximum Junction-to-Case ^D
Steady-State
R_θJC
4
4.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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