AON7400_11 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AON7400
30V N-Channel MOSFET
General Description
Product Summary
The AON7400 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge.
This device is suitable for use in DC - DC converters and
Load Switch applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
30V
26A
< 12.5mΩ
< 14.5mΩ
DFN 3x3 EP
Top View
Bottom View
Pin 1
Top View
1
8
2
7
3
6
4
5
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±12
26
20
80
10
9
35
14
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
30
60
Maximum Junction-to-Case
Steady-State
R_θJC
3.1
Max
40
75
3.7
D
S
Units
V
V
A
A
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 3: Mar. 2011
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