AON7290 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 100V N-Channel MOSFET

AON7290
100V N-Channel MOSFET
General Description
Product Summary
The AON7290 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of R_DS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=6V)
100% UIS Tested
100% R_g Tested
100V
50A
< 12.6mΩ
< 18mΩ
DFN 3.3x3.3 EP
Top View
Bottom View
Top View
1
8
2
7
3
6
4
5
G
Pin 1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
100
±20
50
35
125
15
12
30
45
83
33
6.25
4
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
16
45
Maximum Junction-to-Case
Steady-State
R_θJC
1
Max
20
55
1.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Sep. 2012
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