AON6974A Datasheet, PDF (1/10 Pages) Alpha & Omega Semiconductors – 30V Dual Asymmetric N-Channel AlphaMOS

AON6974A
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Integrated Schottky Diode (SRFET) on Low-Side
• Very Low RDS(on) at 4.5V_GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
28A
<5.2mΩ
<9.5mΩ
Q2
30V
32A
<3.3mΩ
<5.0mΩ
Top View
DFN5X6B
Bottom View
Top View
Bottom View
PIN1
PIN1
Q2: SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
±20
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
28
32
22
25
Pulsed Drain Current ^C
I_DM
112
144
Continuous Drain
Current
T_A=25°C
T_A=70°C
22
I_DSM
17
30
24
Avalanche Current ^C
I_AS
32
50
Avalanche Energy L=0.05mH ^C
E_AS
26
63
V_DS Spike
100ns
V_SPIKE
36
36
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
31
12
33
13
T_A=25°C
Power Dissipation ^A T_A=70°C
3.6
4.3
P_DSM
2.3
2.7
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ Q1
29
56
3.3
Typ Q2
24
50
3
Max Q1
35
67
4
Max Q2
29
60
3.8
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Nov. 2012
www.aosmd.com
Page 1 of 10