AON6970 Datasheet, PDF (1/10 Pages) Alpha & Omega Semiconductors – 30V Dual Asymmetric N-Channel AlphaMOS

AON6970
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low R_DS(on) at 4.5V_GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
58A
<5.4mΩ
<8.5mΩ
Q2
30V
85A
<1.5mΩ
<2.3mΩ
DFN5X6D
Top View
Bottom View
Top View
Bottom View
G2
S2
S2
S2
PHASE
(S1/D2)
PIN1
D1
D1 ^G1
D1 ^D1
PIN1
PHASE
S1/D2
Q2: SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
D1
S1/D2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
±20
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
58
36
85
66
Pulsed Drain Current ^C
I_DM
135
340
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche Energy L=0.05mH ^C
24
42
I_DSM
19
33
I_AS
35
65
E_AS
31
106
V_DS Spike
100ns
V_SPIKE
36
36
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
31
12
78
31
T_A=25°C
Power Dissipation ^A T_A=70°C
5
4.1
P_DSM
3.2
2.6
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ Q1
20
50
3.3
Typ Q2
25
56
1.2
Max Q1
25
60
4
Max Q2
30
67
1.6
Units
°C/W
°C/W
°C/W
Rev0 : Sep 2012
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