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AON6936 Datasheet, PDF (1/10 Pages) Alpha & Omega Semiconductors – 30V Dual Asymmetric N-Channel AlphaMOS | |||
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AON6936
30V Dual Asymmetric N-Channel AlphaMOS
General Description
⢠Latest Trench Power AlphaMOS (αMOS LV) technology
⢠Very Low RDS(on) at 4.5VGS
⢠Low Gate Charge
⢠High Current Capability
⢠RoHS and Halogen-Free Compliant
Application
⢠DC/DC Converters in Computing, Servers, and POL
⢠Isolated DC/DC Converters in Telecom and Industrial
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
32A
<4.9mâ¦
<8.4mâ¦
Q2
30V
44A
<2mâ¦
<2.8mâ¦
Top View
DFN5X6B
Bottom View
PIN1
Top View
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
CurrentG
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
Current
TA=25°C
TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche Energy L=0.05mH C
EAS
VDS Spike
100ns
VSPIKE
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Max Q1
Max Q2
30
±20
32
44
25
34
128
176
22
40
18
32
32
50
26
63
36
36
31
83
12
33
3.6
4.3
2.3
2.7
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ⤠10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
29
56
3.3
Typ Q2
24
50
1.2
Max Q1
35
67
4
Max Q2
29
60
1.5
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : July 2012
www.aosmd.com
Page 1 of 10
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